ROICERAM™-HS silicon carbide (SiC) combines high purity, high strength, low thermal expansion, low particle generation, and excellent acid and heat resistance, the contamination-control properties semiconductor wafer fabrication demands. ROICERAM™-HS is one of two flagship product lines manufactured at our Hillsboro, Oregon facility, making us a US manufacturer of silicon carbide components for the global semiconductor industry.
We bring over 30 years of experience supplying SiC parts for semiconductor manufacturing furnaces and CVD chambers, primarily in high-temperature thermal processing applications. The technologies we accumulated in the semiconductor market have since extended into LED, solar cell, and SiC power-device markets.
About silicon carbide
Silicon carbide (SiC) is a compound of silicon and carbon, classified as a ceramic. It has hardness third only to diamond and boron carbide, and it excels in heat resistance, chemical stability, oxidation resistance, and thermal conductivity. These properties make it the preferred material for the highest-temperature, highest-purity environments in semiconductor manufacturing.
Features of ROICERAM™-HS
What ROICERAM™-HS offers
- Recrystallized and CVD-coated grades. Both fabrication routes are available from the Hillsboro facility, with grade selection driven by your process temperature and chemistry.
- Wide form-factor library. Vertical wafer boats, horizontal boats, susceptors, pedestals, tubes, plates, rings, and brackets for diffusion furnaces, LPCVD reactors, single-wafer RTP chambers, and MOCVD systems.
- Complex assembled structures. Connecting technology developed in-house enables fabrication of multi-piece furnace components that would otherwise be impractical to machine as a single body.
- Precision machining. Micron-order tolerances on critical surfaces.
- CVD-deposited SiC film. Chemical vapor deposition coats finished parts with a dense SiC layer for extended life in aggressive environments.
- American-made. Manufactured in Hillsboro, Oregon, for US semiconductor fabs and a global customer base, with full domestic supply-chain control.
Where it’s used today
A high-temperature diffusion furnace, the kind of environment where ROICERAM™-HS components run for thousands of hours.
Vertical and horizontal diffusion furnaces, single-wafer rapid thermal processing, MOCVD reactors for LED epitaxy, and high-temperature diffusion furnaces for crystalline silicon photovoltaic production. SiC power-device manufacturing, itself a growing semiconductor segment, uses the same parts to handle higher process temperatures than would be possible with quartz or graphite tooling.
ROICERAM™-HS also serves outside the furnace: its high specific stiffness and low thermal expansion make it a structural and optical-grade material for extreme-ultraviolet (EUV) lithography systems, where optical and metrology structures must stay dimensionally stable to nanometer precision.
Emerging applications under technical evaluation include nuclear (fission and fusion) and aerospace structural use, where the combination of low density and high temperature stability is difficult to match with any competing material.
Who we supply
ROICERAM™-HS ships from Hillsboro through two customer channels:
- Equipment OEMs. We work with semiconductor capital-equipment manufacturers who integrate ROICERAM components into the diffusion, LPCVD, RTP, and MOCVD tools they design and build. We support OEM programs from prototype through volume production, including custom geometries, fixtures, and assembled structures specified by the tool architecture.
- Semiconductor fabs. We also supply fabs directly with replacement boats, susceptors, pedestals, tubes, plates, rings, and brackets for installed furnaces. Drop-in replacements match the geometry of incumbent parts; longer-life CVD-coated variants are available as direct upgrades on the same form factor.
Both channels run from the same Hillsboro production line on identical specifications. Talk to AMS to discuss either a new OEM program or a fab replacement schedule.
Applications
- Semiconductor production equipment (Si, SiC power devices, high-temperature oxidation/diffusion furnaces, LPCVD furnaces)
- LED manufacturing equipment (MOCVD furnaces)
- Solar cell production equipment (high-temperature diffusion furnaces)
- Extreme-ultraviolet (EUV) lithography systems -- structural and optical-grade SiC components
- Structural material for precision optical devices
- Aerospace and energy applications
Documents
- Spec Sheet (ROICERAM™-HS) Available on request
- Material Safety Data Sheet (MSDS) Available on request
- RoHS Declaration Available on request
- REACH Declaration Available on request
- ISO 9001:2015 Certificate Available on request
Material Properties
Silicon Carbide specifications
Product range
ROICERAM™-HS components ship from Hillsboro in a wide variety of form factors. Boats and boat assemblies, vertical pedestals and rings for diffusion furnaces, brackets, discs, and supports are all machined and CVD-coated to your process tolerances.
In the process
ROICERAM™-HS boats, pedestals, and carriers do their work inside high-temperature furnaces and deposition chambers across the semiconductor, LED, and solar industries. The illustrations below show where the material sits in the process.
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