EUV mask blanks are the foundation of every extreme ultraviolet lithography photomask used in advanced-node semiconductor manufacturing. The mask blank is a low-thermal-expansion glass substrate carrying a proprietary multi-layer optical coating film. An EUV photomask is then created by patterning a semiconductor chip’s circuit onto a mask blank, and the patterned mask is used to transfer that pattern onto a silicon wafer.
AGC is a global materials leader in EUV materials and AGC Electronics America provides US-based distribution support for North American semiconductor manufacturers.
As semiconductor circuits become finer, the requirements for EUV mask blanks rise sharply. Defects must be minimized and substrate flatness pushed to extreme tolerances.
A mask-handling system in an EUV lithography tool, where photomasks built on AGC mask blanks transfer circuit patterns to the wafer.
AGC: the integrated manufacturer
AGC is the only company in the world that handles every step of EUV mask blank production, from the underlying glass material through the optical coating. R&D on photomask blanks for EUV lithography began in 2003, with production starting in 2017.
EUV has been adopted not only for logic devices but also for DRAM and other memory, driving a sharp increase in demand. AGC continues to invest in capacity expansion to keep pace, including a major expansion project announced in July 2020 with production beginning at AGC Electronics in January 2022.
Working with us
The EUV mask blank business is highly specialized, with each customer engagement involving detailed technical qualification. AGCEA’s Hillsboro team can connect North American semiconductor manufacturers with the AGC technical sales organization for evaluation samples and production agreements.
Applications
- Photomasks for EUV lithography (sub-7nm logic nodes)
- Photomasks for DRAM and other memory devices using EUV
Documents
Documents available on request. Use the form below.
Specifications
Detailed specifications available on request. Use the form below.
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